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1. product pro?le 1.1 general description npn/pnp double low v cesat breakthrough in small signal (biss) transistor in a medium power surface-mounted device (smd) plastic package. 1.2 features n low collector-emitter saturation voltage v cesat n high collector current capability i c and i cm n high collector current gain (h fe ) at high i c n high ef?ciency due to less heat generation n smaller required printed-circuit board (pcb) area than for conventional transistors 1.3 applications n complementary mosfet driver n half and full bridge motor drivers n dual low power switches (e.g. motors, fans) n automotive 1.4 quick reference data PBSS4350SPN 50 v, 2.7 a npn/pnp low v cesat (biss) transistor rev. 01 5 april 2007 product data sheet table 1. product overview type number package npn/npn complement pnp/pnp complement nxp name PBSS4350SPN sot96-1 so8 pbss4350ss pbss5350ss table 2. quick reference data symbol parameter conditions min typ max unit tr1; npn low v cesat transistor v ceo collector-emitter voltage open base - - 50 v i c collector current - - 2.7 a i cm peak collector current single pulse; t p 1ms --5 a r cesat collector-emitter saturation resistance i c =2a; i b = 200 ma [1] - 90 130 m w
PBSS4350SPN_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 5 april 2007 2 of 19 nxp semiconductors PBSS4350SPN 50 v, 2.7 a npn/pnp low v cesat (biss) transistor [1] pulse test: t p 300 m s; d 0.02. 2. pinning information 3. ordering information 4. marking tr2; pnp low v cesat transistor v ceo collector-emitter voltage open base - - - 50 v i c collector current - - - 2.7 a i cm peak collector current single pulse; t p 1ms -- - 5a r cesat collector-emitter saturation resistance i c = - 2a; i b = - 200 ma [1] - 95 140 m w table 2. quick reference data continued symbol parameter conditions min typ max unit table 3. pinning pin description simpli?ed outline symbol 1 emitter tr1 2 base tr1 3 emitter tr2 4 base tr2 5 collector tr2 6 collector tr2 7 collector tr1 8 collector tr1 4 5 1 8 006aaa985 8765 1234 tr1 tr2 table 4. ordering information type number package name description version PBSS4350SPN so8 plastic small outline package; 8 leads; body width 3.9 mm sot96-1 table 5. marking codes type number marking code PBSS4350SPN 4350spn
PBSS4350SPN_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 5 april 2007 3 of 19 nxp semiconductors PBSS4350SPN 50 v, 2.7 a npn/pnp low v cesat (biss) transistor 5. limiting values [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for collector 1 cm 2 . [3] device mounted on a ceramic pcb, al 2 o 3 , standard footprint. table 6. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit per transistor; for the pnp transistor with negative polarity v cbo collector-base voltage open emitter - 50 v v ceo collector-emitter voltage open base - 50 v v ebo emitter-base voltage open collector - 5 v i c collector current - 2.7 a i cm peak collector current single pulse; t p 1ms -5a i b base current - 0.5 a p tot total power dissipation t amb 25 c [1] - 0.55 w [2] - 0.87 w [3] - 1.43 w per device p tot total power dissipation t amb 25 c [1] - 0.75 w [2] - 1.2 w [3] -2w t j junction temperature - 150 c t amb ambient temperature - 65 +150 c t stg storage temperature - 65 +150 c
PBSS4350SPN_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 5 april 2007 4 of 19 nxp semiconductors PBSS4350SPN 50 v, 2.7 a npn/pnp low v cesat (biss) transistor (1) ceramic pcb, al 2 o 3 , standard footprint (2) fr4 pcb, mounting pad for collector 1 cm 2 (3) fr4 pcb, standard footprint fig 1. per device: power derating curves t amb ( c) - 75 175 125 25 75 - 25 006aaa967 1.0 1.5 0.5 2.0 2.5 p tot (w) 0 (1) (2) (3)
PBSS4350SPN_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 5 april 2007 5 of 19 nxp semiconductors PBSS4350SPN 50 v, 2.7 a npn/pnp low v cesat (biss) transistor 6. thermal characteristics [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for collector 1 cm 2 . [3] device mounted on a ceramic pcb, al 2 o 3 , standard footprint. table 7. thermal characteristics symbol parameter conditions min typ max unit per transistor r th(j-a) thermal resistance from junction to ambient in free air [1] - - 227 k/w [2] - - 144 k/w [3] --87k/w r th(j-sp) thermal resistance from junction to solder point --40k/w per device r th(j-a) thermal resistance from junction to ambient in free air [1] - - 167 k/w [2] - - 104 k/w [3] --63k/w fr4 pcb, standard footprint fig 2. per transistor: transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aaa809 10 1 10 2 10 3 z th(j-a) (k/w) 10 - 1 10 - 5 10 10 - 2 10 - 4 10 2 10 - 1 t p (s) 10 - 3 10 3 1 0.01 0 0.02 0.05 0.1 0.2 0.33 0.5 0.75 1.0 duty cycle =
PBSS4350SPN_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 5 april 2007 6 of 19 nxp semiconductors PBSS4350SPN 50 v, 2.7 a npn/pnp low v cesat (biss) transistor fr4 pcb, mounting pad for collector 1 cm 2 fig 3. per transistor: transient thermal impedance from junction to ambient as a function of pulse duration; typical values ceramic pcb, al 2 o 3 , standard footprint fig 4. per transistor: transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aaa810 10 1 10 2 10 3 z th(j-a) (k/w) 10 - 1 10 - 5 10 10 - 2 10 - 4 10 2 10 - 1 t p (s) 10 - 3 10 3 1 duty cycle = 0.01 0 0.02 0.05 0.1 0.2 0.33 0.5 0.75 1.0 006aaa811 t p (s) 10 - 4 10 2 10 3 10 1 10 - 3 10 - 1 10 - 2 10 2 10 10 3 z th(j-a) (k/w) 1 0.02 0.05 0.1 0.2 0.33 0.5 0.75 1.0 0 0.01 duty cycle =
PBSS4350SPN_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 5 april 2007 7 of 19 nxp semiconductors PBSS4350SPN 50 v, 2.7 a npn/pnp low v cesat (biss) transistor 7. characteristics table 8. characteristics t amb =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit tr1; npn low v cesat transistor i cbo collector-base cut-off current v cb =50v; i e = 0 a - - 100 na v cb =50v; i e =0a; t j = 150 c --50 m a i ces collector-emitter cut-off current v ce =50v; v be = 0 v - - 100 na i ebo emitter-base cut-off current v eb =5v; i c = 0 a - - 100 na h fe dc current gain v ce =2v; i c = 100 ma 300 520 - v ce =2v; i c = 500 ma [1] 300 500 - v ce =2v; i c =1a [1] 300 470 - v ce =2v; i c =2a [1] 200 340 - v ce =2v; i c = 2.7 a [1] 120 180 - v cesat collector-emitter saturation voltage [1] i c = 0.5 a; i b = 50 ma - 50 80 mv i c = 1 a; i b = 50 ma - 100 160 mv i c = 2 a; i b = 100 ma - 190 280 mv i c = 2 a; i b = 200 ma - 180 260 mv i c = 2.7 a; i b = 270 ma - 240 340 mv r cesat collector-emitter saturation resistance i c = 2 a; i b = 200 ma [1] - 90 130 m w v besat base-emitter saturation voltage [1] i c = 2 a; i b = 100 ma - 0.95 1.1 v i c = 2.7 a; i b = 270 ma - 1.1 1.2 v v beon base-emitter turn-on voltage v ce =2v; i c =1a [1] - 0.8 1.2 v t d delay time v cc =10v; i c =2a; i bon = 100 ma; i boff = - 100 ma -8-ns t r rise time - 96 - ns t on turn-on time - 104 - ns t s storage time - 355 - ns t f fall time - 165 - ns t off turn-off time - 520 - ns c c collector capacitance v cb =10v; i e =i e =0a; f=1mhz - 1825pf
PBSS4350SPN_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 5 april 2007 8 of 19 nxp semiconductors PBSS4350SPN 50 v, 2.7 a npn/pnp low v cesat (biss) transistor [1] pulse test: t p 300 m s; d 0.02. tr2; pnp low v cesat transistor i cbo collector-base cut-off current v cb = - 50 v; i e =0a - - - 100 na v cb = - 50 v; i e =0a; t j = 150 c -- - 50 m a i ces collector-emitter cut-off current v ce = - 50 v; v be =0v - - - 100 na i ebo emitter-base cut-off current v eb = - 5 v; i c =0a - - - 100 na h fe dc current gain v ce = - 2 v; i c = - 100 ma 200 340 - v ce = - 2 v; i c = - 500 ma [1] 200 290 - v ce = - 2 v; i c = - 1a [1] 180 250 - v ce = - 2 v; i c = - 2a [1] 130 180 - v ce = - 2 v; i c = - 2.7 a [1] 95 135 - v cesat collector-emitter saturation voltage [1] i c = - 0.5 a; i b = - 50 ma - - 60 - 90 mv i c = - 1 a; i b = - 50 ma - - 125 - 180 mv i c = - 2 a; i b = - 100 ma - - 225 - 320 mv i c = - 2 a; i b = - 200 ma - - 190 - 280 mv i c = - 2.7 a; i b = - 270 ma - - 255 - 370 mv r cesat collector-emitter saturation resistance i c = - 2 a; i b = - 200 ma [1] - 95 140 m w v besat base-emitter saturation voltage [1] i c = - 2 a; i b = - 100 ma - - 0.95 - 1.1 v i c = - 2.7 a; i b = - 270 ma - - 1 - 1.2 v v beon base-emitter turn-on voltage v ce = - 2 v; i c = - 1a [1] - - 0.8 - 1.2 v t d delay time v cc = - 10 v; i c = - 2a; i bon = - 100 ma; i boff = 100 ma -9-ns t r rise time - 54 - ns t on turn-on time - 63 - ns t s storage time - 190 - ns t f fall time - 50 - ns t off turn-off time - 240 - ns c c collector capacitance v cb = - 10 v; i e =i e =0a; f=1mhz - 2535pf table 8. characteristics continued t amb =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit
PBSS4350SPN_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 5 april 2007 9 of 19 nxp semiconductors PBSS4350SPN 50 v, 2.7 a npn/pnp low v cesat (biss) transistor v ce =2v (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c t amb =25 c fig 5. tr1 (npn): dc current gain as a function of collector current; typical values fig 6. tr1 (npn): collector current as a function of collector-emitter voltage; typical values v ce =2v (1) t amb = - 55 c (2) t amb =25 c (3) t amb = 100 c i c /i b =20 (1) t amb = - 55 c (2) t amb =25 c (3) t amb = 100 c fig 7. tr1 (npn): base-emitter voltage as a function of collector current; typical values fig 8. tr1 (npn): base-emitter saturation voltage as a function of collector current; typical values 006aaa968 400 600 200 800 1000 h fe 0 i c (ma) 10 - 1 10 4 10 3 110 2 10 (1) (2) (3) v ce (v) 0 2.0 1.6 0.8 1.2 0.4 006aaa969 2 3 1 4 5 i c (a) 0 i b (ma) = 100 90 10 80 70 60 50 40 30 20 006aaa970 0.4 0.8 1.2 v be (v) 0 i c (ma) 10 - 1 10 4 10 3 110 2 10 (1) (2) (3) 006aaa971 0.6 1.0 1.4 v besat (v) 0.2 i c (ma) 10 - 1 10 4 10 3 110 2 10 (1) (2) (3)
PBSS4350SPN_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 5 april 2007 10 of 19 nxp semiconductors PBSS4350SPN 50 v, 2.7 a npn/pnp low v cesat (biss) transistor i c /i b =20 (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c t amb =25 c (1) i c /i b = 100 (2) i c /i b =50 (3) i c /i b =10 fig 9. tr1 (npn): collector-emitter saturation voltage as a function of collector current; typical values fig 10. tr1 (npn): collector-emitter saturation voltage as a function of collector current; typical values i c /i b =20 (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c t amb =25 c (1) i c /i b = 100 (2) i c /i b =50 (3) i c /i b =10 fig 11. tr1 (npn): collector-emitter saturation resistance as a function of collector current; typical values fig 12. tr1 (npn): collector-emitter saturation resistance as a function of collector current; typical values 006aaa972 10 - 1 10 - 2 1 v cesat (v) 10 - 3 i c (ma) 10 - 1 10 4 10 3 110 2 10 (1) (2) (3) 006aaa973 10 - 1 10 - 2 1 v cesat (v) 10 - 3 i c (ma) 10 - 1 10 4 10 3 110 2 10 (1) (2) (3) i c (ma) 10 - 1 10 4 10 3 110 2 10 006aaa974 1 10 - 1 10 2 10 10 3 r cesat ( w ) 10 - 2 (1) (2) (3) i c (ma) 10 - 1 10 4 10 3 110 2 10 006aaa975 1 10 - 1 10 2 10 10 3 r cesat ( w ) 10 - 2 (1) (2) (3)
PBSS4350SPN_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 5 april 2007 11 of 19 nxp semiconductors PBSS4350SPN 50 v, 2.7 a npn/pnp low v cesat (biss) transistor v ce = - 2v (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c t amb =25 c fig 13. tr2 (pnp): dc current gain as a function of collector current; typical values fig 14. tr2 (pnp): collector current as a function of collector-emitter voltage; typical values v ce = - 2v (1) t amb = - 55 c (2) t amb =25 c (3) t amb = 100 c i c /i b =20 (1) t amb = - 55 c (2) t amb =25 c (3) t amb = 100 c fig 15. tr2 (pnp): base-emitter voltage as a function of collector current; typical values fig 16. tr2 (pnp): base-emitter saturation voltage as a function of collector current; typical values 006aaa977 200 400 600 h fe 0 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 (1) (2) (3) v ce (v) 0 - 2.0 - 1.6 - 0.8 - 1.2 - 0.4 006aaa978 - 2 - 3 - 1 - 4 - 5 i c (a) 0 i b (ma) = - 140 - 126 - 112 - 98 - 84 - 70 - 56 - 14 - 28 - 42 006aaa979 - 0.4 - 0.8 - 1.2 v be (v) 0 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 (1) (2) (3) 006aaa980 - 0.6 - 1.0 - 1.4 v besat (v) - 0.2 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 (1) (2) (3)
PBSS4350SPN_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 5 april 2007 12 of 19 nxp semiconductors PBSS4350SPN 50 v, 2.7 a npn/pnp low v cesat (biss) transistor i c /i b =20 (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c t amb =25 c (1) i c /i b = 100 (2) i c /i b =50 (3) i c /i b =10 fig 17. tr2 (pnp): collector-emitter saturation voltage as a function of collector current; typical values fig 18. tr2 (pnp): collector-emitter saturation voltage as a function of collector current; typical values i c /i b =20 (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c t amb =25 c (1) i c /i b = 100 (2) i c /i b =50 (3) i c /i b =10 fig 19. tr2 (pnp): collector-emitter saturation resistance as a function of collector current; typical values fig 20. tr2 (pnp): collector-emitter saturation resistance as a function of collector current; typical values 006aaa981 - 10 - 1 - 10 - 2 - 1 v cesat (v) - 10 - 3 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 (1) (2) (3) 006aaa982 - 10 - 1 - 10 - 2 - 1 v cesat (v) - 10 - 3 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 (1) (2) (3) i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 006aaa983 1 10 - 1 10 2 10 10 3 r cesat ( w ) 10 - 2 (1) (2) (3) i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 006aaa984 1 10 - 1 10 2 10 10 3 r cesat ( w ) 10 - 2 (1) (2) (3)
PBSS4350SPN_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 5 april 2007 13 of 19 nxp semiconductors PBSS4350SPN 50 v, 2.7 a npn/pnp low v cesat (biss) transistor 8. test information fig 21. tr1 (npn): biss transistor switching time de?nition v cc =10v; i c = 2 a; i bon = 100 ma; i boff = - 100 ma fig 22. tr1 (npn): test circuit for switching times 006aaa003 i bon (100 %) i b input pulse (idealized waveform) i boff 90 % 10 % i c (100 %) i c t d t on 90 % 10 % t r output pulse (idealized waveform) t f t t s t off r c r2 r1 dut mlb826 v o r b (probe) 450 w (probe) 450 w oscilloscope oscilloscope v bb v i v cc
PBSS4350SPN_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 5 april 2007 14 of 19 nxp semiconductors PBSS4350SPN 50 v, 2.7 a npn/pnp low v cesat (biss) transistor fig 23. tr2 (pnp): biss transistor switching time de?nition v cc = - 10 v; i c = - 2 a; i bon = - 100 ma; i boff = 100 ma fig 24. tr2 (pnp): test circuit for switching times 006aaa266 - i bon (100 %) - i b input pulse (idealized waveform) - i boff 90 % 10 % - i c (100 %) - i c t d t on 90 % 10 % t r output pulse (idealized waveform) t f t t s t off r c r2 r1 dut mgd624 v o r b (probe) 450 w (probe) 450 w oscilloscope oscilloscope v bb v i v cc
PBSS4350SPN_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 5 april 2007 15 of 19 nxp semiconductors PBSS4350SPN 50 v, 2.7 a npn/pnp low v cesat (biss) transistor 9. package outline 10. packing information [1] for further information and the availability of packing methods, see section 14 . fig 25. package outline sot96-1 (so8) 03-02-18 dimensions in mm 1.0 0.4 1.75 pin 1 index 0.49 0.36 0.25 0.19 5.0 4.8 4.0 3.8 6.2 5.8 1.27 table 9. packing methods the indicated -xxx are the last three digits of the 12nc ordering code. [1] type number package description packing quantity 1000 2500 PBSS4350SPN sot96-1 8 mm pitch, 12 mm tape and reel -115 -118
PBSS4350SPN_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 5 april 2007 16 of 19 nxp semiconductors PBSS4350SPN 50 v, 2.7 a npn/pnp low v cesat (biss) transistor 11. soldering fig 26. re?ow soldering footprint sot96-1 (so8) fig 27. wave soldering footprint sot96-1 (so8) sot096-1_fr occupied area solder lands dimensions in mm placement accuracy 0.25 1.30 0.60 (8 ) 1.27 (6 ) 4.00 6.60 5.50 7.00 sot096-1_fw solder resist occupied area solder lands dimensions in mm board direction placement accurracy 0.25 4.00 5.50 1.30 0.3 (2 ) 0.60 (6 ) 1.20 (2 ) 1.27 (6 ) 7.00 6.60 enlarged solder land
PBSS4350SPN_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 5 april 2007 17 of 19 nxp semiconductors PBSS4350SPN 50 v, 2.7 a npn/pnp low v cesat (biss) transistor 12. revision history table 10. revision history document id release date data sheet status change notice supersedes PBSS4350SPN_1 20070405 product data sheet - -
PBSS4350SPN_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 5 april 2007 18 of 19 nxp semiconductors PBSS4350SPN 50 v, 2.7 a npn/pnp low v cesat (biss) transistor 13. legal information 13.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 13.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 13.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 13.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 14. contact information for additional information, please visit: http://www .nxp.com for sales of?ce addresses, send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors PBSS4350SPN 50 v, 2.7 a npn/pnp low v cesat (biss) transistor ? nxp b.v. 2007. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 5 april 2007 document identifier: PBSS4350SPN_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 15. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 thermal characteristics. . . . . . . . . . . . . . . . . . . 5 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 7 8 test information . . . . . . . . . . . . . . . . . . . . . . . . 13 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . 15 10 packing information. . . . . . . . . . . . . . . . . . . . . 15 11 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . 17 13 legal information. . . . . . . . . . . . . . . . . . . . . . . 18 13.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 18 13.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 13.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 13.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 14 contact information. . . . . . . . . . . . . . . . . . . . . 18 15 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

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